Abstract:

The cross-saturation characteristics of GaN quantum well lasers are theoretically calculated and analyzed based on the analyses of the energy band structure and the transition matrix elements of GaN.The curves of the cross-saturation coefficients for self-crossed or crossed TE and TM modes are then obtained.Th e effects of the ener.gY band structure and the carrier sheet density on the cross-saturation characteristics are finally analyzed.It is found that,when the two interactional optical fields are of the same~equency.the cross.saturation coemcient will achieve the peak value;on the contrary,when the two fields are of diferent frequencies,the cross.saturation coefficient is far less than the peak value.Moreover,when at its peak value,the cross.saturation coefficient is greatly afected by the carrier sheet density.Thus,one can change the cross-saturation coeficient by changing the carrier sheet density.

Key words: GaN, quantum well laser, cross-saturation