Journal of South China University of Technology (Natural Science Edition) ›› 2011, Vol. 39 ›› Issue (9): 103-107.doi: 10.3969/j.issn.1000-565X.2011.09.018

• Electronics, Communication & Automation Technology • Previous Articles     Next Articles

Effects of Annealing Temperature on Electrical Properties of ZnO Thin-Film Transistors

Liu Yu-rong1,2  Ren Li-fei1  Yang Ren-hua1  Han Jing1  Yao Ruo-he1,2  Wen Zhi-chao1  Xu Hai-hong3  Xu Jia-Xiong1   

  1. 1. School of Electronic and Information Engineering,South China University of Technology,Guangzhou 510640,Guangdong,China; 2. Guangdong Key Laboratory of Short-Range Wireless Detection and Communication,South China University of Technology,Guangzhou 510640,Guangdong,China; 3. Department of Physics,South China University of Technology,Guangzhou 510640,Guangdong,China
  • Received:2011-02-24 Revised:2011-03-14 Online:2011-09-25 Published:2011-08-02
  • Contact: 刘玉荣(1968-) ，男，博士，副教授，主要从事半导体器件与物理研究． E-mail:phlyr@scut.edu.cn
  • About author:刘玉荣(1968-) ，男，博士，副教授，主要从事半导体器件与物理研究．
  • Supported by:

    国家自然科学基金资助项目( 61076113) ; 广东省自然科学基金资助项目( 8451064101000257) ; 华南理工大学中央高校基本科研业务费专项资金资助项目( 2011ZM0027) ; 广东省大学生创新实验项目( S1010561035)

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Abstract:

Aiming at the low mobilities of the thin film transistors respectively based on amorphous silicon and organic semiconductor,ZnO thin-film transistors ( ZnO-TFTs) were successfully prepared by means of the reactive magnetron sputtering from a high-purity Zn metal target,with the ZnO thin-films annealed at different temperatures as the active layer. The effects of the annealing temperature on the electrical properties of the ZnO-TFTs were investigated. The results show that the carrier mobility of the ZnO-TFTs obviously increases with the annealing temperature,which is up to 8. 00 cm2 /( V·s) at 700℃,while the threshold voltage obviously decreases with the increase of the annealing temperature,and that ZnO-TFTs with the annealing treatment at a higher temperature is of lower OFF-state current. Moreover,according to the microstructure and compositions of the ZnO thin-films characterized by means of XRD,AFM and XPS,it is concluded that the performance improvement of the ZnO-TFTs with the increase of the annealing temperature is attributed to the facts that the increase of the temperature results in larger and more uniform grain size,lower surface roughness and lower oxygen content.

Key words: thin film transistors, zinc oxide, electrical properties, annealing temperature

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