Journal of South China University of Technology (Natural Science Edition) ›› 2013, Vol. 41 ›› Issue (6): 11-16.doi: 10.3969/j.issn.1000-565X.2013.06.003

• Electronics, Communication & Automation Technology • Previous Articles     Next Articles

Photo- Induced Instability of ZnO- Based Thin Film Transistors

Wang Cong1 Liu Yu- rong1,2 Li Xing- huo3 Su Jing1 Yao Ruo- he1,2   

  1. 1.School of Electronic and Information Engineering,South China University of Technology,Guangzhou 510640,Guangdong,China;2.Guangdong Provincial Key Laboratory of Short- Range Wireless Detection and Communication,South China University of Technology,Guangzhou 510640,Guangdong,China; 3.Department of Electronic Information,Shanwei Vocational and Technical College,Shanwei 516600,Guangdong,China
  • Received:2012-09-24 Revised:2012-12-27 Online:2013-06-25 Published:2013-05-03
  • Contact: 刘玉荣(1968-)，男，博士，教授，主要从事半导体器件与物理研究． E-mail:phlyr@scut.edu.cn
  • About author:王聪(1980-)，男，汕尾职业技术学院讲师，主要从事薄膜晶体管研究．E- mail:183318827@qq．com
  • Supported by:

    国家自然科学基金资助项目(61076113， 61274085);广东省自然科学基金资助项目(8451064101000257)

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Abstract:

 In order to promote the commercial application of ZnO- based thin film transistors (ZnO- TFTs) to active-driving flat display field,TFTs with ZnO as the channel layer were fabricated via the RF (Radio Frequency) mag-netron sputtering with undoped ZnO target.Then,the photo- induced instability of the devices was investigated under visible light illumination.Experimental results indicate that (1) the ZnO- TFT device exhibits light- induced instability under visible light illumination; (2) with the increase of illumination intensity,the carrier mobility of the device slightly increases,while the threshold voltage weakly reduces; and (3) the relative variation of drain current is strongly modulated by gate voltage,for instance,it becomes smaller with a minimum of 0.58 at 2210lx when the device operates in the on- state mode,but becomes larger with a maximum of 36.29 at the same illumina-tion intensity when the device operates in the subthreshold or off- state mode.Moreover,it is also found that,the recovery of the photo- induced instability is relatively slow and tends to slow down with the passage of time.

Key words:  thin film transistors, zinc oxide, photoinduction, stability