华南理工大学学报(自然科学版) ›› 2003, Vol. 31 ›› Issue (1): 38-41.

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无屏蔽罩的矩形平面磁控溅射靶的设计

常天海   

  1. 华南理工大学 电子与信息工程学院‚广东 广州510640
  • 出版日期:2003-01-20 发布日期:2022-04-02
  • 通信作者: 常天海(1964-)‚男‚副教授‚主要从事薄膜及光电子技术研究.
  • 作者简介:常天海(1964-)‚男‚副教授‚主要从事薄膜及光电子技术研究.

Design on Rectangular Planar Magnetron Sputtering Target Without Shielding Cover

Chang Tian-hai   

  1. College of Electronic&Information Engineering‚South China Univ.of Tech.‚Guangzhou510640‚China
  • Online:2003-01-20 Published:2022-04-02

摘要: 通过理论分析、实际设计和实验‚对矩形平面磁控溅射靶表面水平磁感应强度 B的传统取值上限进行了拓展.结果表明:若阴极靶体下表面和4个侧面的的磁感应强度被屏蔽低于0.0005T‚同时上表面覆盖同一靶材‚则可抛弃屏蔽罩‚采用裸靶结构‚靶表面的水平磁感应强度 B 就可以远高于0.05T‚达到0.09T;此外‚B 的增加显著降低了磁控溅射镀膜工艺的着火电压和维持放电电压‚为实现低电压磁控溅射提供了另外一种思路.

关键词: 磁控溅射, 屏蔽罩, 磁感应强度, 设计

Abstract: The traditional upper limit of magnetic induction density B parallel to target surface in rectangular planar magnetron sputtering target has been increased by analyzing‚designing and experimenting.The results show that shielding cover can be discarded‚naked target can be adopted and the B can exceed0.05T greatly and achieved0.09T ‚under the condition of the of magnetic induction density paral - lel to cathode bottom and sides under0.0005T by shielding‚and at the same time the cathode upper surface is covered with the same kind of target material.Further more‚the increase of B reduced greatly the touching off and keeping discharge voltages during magnetron sputtering coating‚which gives another approach to lower voltage magnetron sputtering.

Key words: magnetron sputtering, shielding cover, magnetic induction density, design