Journal of South China University of Technology (Natural Science Edition) ›› 2010, Vol. 38 ›› Issue (10): 24-29,35.doi: 10.3969/j.issn.1000-565X.2010.10.005

• Electronics, Communication & Automation Technology • Previous Articles     Next Articles

Leakage Current and Noise Model of Polysilicon Thin-Film Transistors

Huang Jun-kai1  Zheng Xue-ren1  Deng Wan-ling2   

  1. 1.School of Electronic and Information Engineering,South China University of Technology,Guangzhou 510640,Guangdong,China;2.College of Information Science and Technology,Jinan University,Guangzhou 510630,Guangdong,China
  • Received:2009-11-23 Revised:2010-01-11 Online:2010-10-25 Published:2010-10-25
  • Contact: 黄君凯（1963-），男，在职博士生，暨南大学教授，主要从事多晶硅薄膜晶体管物理特性和建模研究． E-mail:hjk196310@126．com
  • About author:黄君凯（1963-），男，在职博士生，暨南大学教授，主要从事多晶硅薄膜晶体管物理特性和建模研究．
  • Supported by:

    广东省教育部产学研结合项目（2008A090400011）

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Abstract:

In order to establish a suitable model to describe the leakage region of circuit simulators,the leakage generation mechanism of polysilicon thin-film transistors is investigated in terms of current,activation energy and low-frequency noise,etc.Then,based on different leakage mechanisms,some approximations of the generation-recombination model are proposed,and a unified leakage current model suitable for the electric field of 1×106~5×108 V/m is deduced.Moreover,the activation energy models for low and moderate electric fields are derived,and a compact model for low-frequency leakage current noise is put forward.Comparisons between the simulated and the experimental results show that the proposed models are all effective and suitable for circuit simulators.

Key words: polysilicon, thin-film transistors, leakage current, activation energy, low-frequency noise model