Journal of South China University of Technology (Natural Science Edition) ›› 2010, Vol. 38 ›› Issue (1): 14-17,43.doi: 10.3969/j.issn.1000-565X.2010.01.003

• Electronics, Communication & Automation Technology • Previous Articles     Next Articles

Modified Model of Threshold Voltage for Thin-Film Transistors with Low-Doped Polysilicon

Yao Ruo-he  Ou Xiu-ping   

  1. School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, Guangdong
  • Received:2009-01-20 Revised:2009-03-07 Online:2010-01-25 Published:2010-01-25
  • Contact: 姚若河（1961-），男，教授，博士生导师，主要从事集成半导体物理及器件研究． E-mail:phrhyao@seut．edu．cn
  • About author:姚若河（1961-），男，教授，博士生导师，主要从事集成半导体物理及器件研究．
  • Supported by:

    国家自然科学基金资助项目（60776020）

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Abstract:

In this paper, first, the surface potential of thin-film transistors with light-doped polysilicon is analyzed. Next, the gate voltage, which corresponds to the channel current that quickly increases when the surface potential deviates from the sub-threshold region, is considered as the threshold voltage. Then, by taking into consideration the single-exponential distribution of trap state density, the surface potential of the transistor is derived, and an ana- lytical model of the threshold voltage is presented. Finally, a numerical simulation is performed to verify the model. The results indicate that the threshold voltage obtained by the proposed model perfectly matches that extracted by the second-derivative method.

Key words: polysilicon, thin-film transistor, threshold voltage, surface potential