Journal of South China University of Technology (Natural Science Edition) ›› 2011, Vol. 39 ›› Issue (10): 1-6.doi: 10.3969/j.issn.1000-565X.2011.10.001

• Electronics, Communication & Automation Technology •     Next Articles

Surface-Potential-Based Analytical Model of Drain Current of Organic Thin-Film Transistor

Wu Qiong  Yao Ruo-he  Liu Yu-rong   

  1. School of Electronic and Information Engineering,South China University of Technology,Guangzhou 510640,Guangdong,China
  • Received:2011-04-28 Revised:2011-06-26 Online:2011-10-25 Published:2011-09-01
  • Contact: 姚若河(1961-) ，男，教授，博士生导师，主要从事集成电路系统设计、半导体物理及器件研究． E-mail: phrhyao@scut．edu．cn E-mail:qiong.wu@mail.scut.edu.cn
  • About author:吴穹(1984-) ，女，博士生，主要从事半导体器件模型和电路仿真研究．
  • Supported by:

    国家自然科学基金资助项目( 60776020， 61076113)

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Abstract:

Proposed in this paper is a surface-potential-based drain current model for organic thin-film transistor ( OTFT) that takes into consideration the exponential distribution of the trap state density within the bandgaps. In the process of modeling,the diffusion and drift currents are approximately identified by means of the charge sheet approach. Then,a high-precision analytical solution for surface potential is presented via Taylor expansion. Moreover,the transfer and temperature characteristics of OTFT are described based on the variable-range hopping theory,i. e.,the thermally-activated tunneling mechanism of carriers between localized states. It is found that the calculation results accord well with the experimental ones,which shows that the proposed model is applicable to the circuit simulator.

Key words: organic thin-film transistor, drain current model, surface potential, transfer characteristics, trap state

CLC Number: