Journal of South China University of Technology (Natural Science Edition) ›› 2010, Vol. 38 ›› Issue (5): 65-70.doi: 10.3969/j.issn.1000-565X.2010.05.013

• Electronics, Communication & Automation Technology • Previous Articles     Next Articles

Stability of Polymer Thin-Film Transistors Based on Poly（3-Hexylthiophene）

Liu Yu-rong1  Zuo Qing-yun1  Peng Jun-biao2   Huang Mei-qian1   

  1. 1.School of Electronic and Information Engineering,South China University of Technology,Guangzhou 510640,Guangdong,China;2.Institute of Polymer Optoelectronic Materials and Devices,South China University of Technology,Guangzhou 510640,Guangdong,China
  • Received:2009-04-20 Revised:2009-05-26 Online:2010-05-25 Published:2010-05-25
  • Contact: 刘玉荣（1968-），男，博士，副教授，主要从事无机／有机信息器件研究． E-mail:phlyr@scut.edu.cn
  • About author:刘玉荣(1968一)，男，博士，副教授，主要从事无机／有机信息器件研究．
  • Supported by:

    广东省自然科学基金博士启动项目(8451064101000257

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Abstract:

In order to improve the stability of polymer thin-film transistors（PTFTs）,PTFTs based on poly（3-hexyl-thiophene）（P3HT） thin films were fabricated on silicon substrate,with SiO2 as the gate insulator and with gold as the source and drain electrodes.Then,the electrical characteristics and air-stability of the devices were investigated,and the mechanism of the instability in air was discussed.The results indicate that,with the increase of exposure time,both the saturation current and the threshold voltage of the devices exposed to ambient air increase ob-viously,that the moisture of ambient air is the key to the device characteristics,and that the passivation treatment with a photoresist layer can effectively improve the stability of the devices exposed to ambient air and increase the carrier mobility by about 3 times.

Key words: thin-film transistor, poly（3-hexylthiophene）, stability, passivation