Influence of Hot-Carrier-Effect on Reliability of n-MOSFETs

Journal of South China University of Technology(Natural Science Edition) ›› 2003, Vol. 31 ›› Issue (7): 33-36.

Influence of Hot-Carrier-Effect on Reliability of n-MOSFETs

ZHU Weiling HUANG Meiqian ZHANG Xiaowen CHEN Ping LI Guanqi

Online:2003-07-20 Published:2022-09-26
Contact: 朱炜玲(1975一)，女，硕士，主要从事微电子学研究。
About author:朱炜玲(1975一)，女，硕士，主要从事微电子学研究。

Abstract

Abstract: Influence of hot-carrier-effect on degradation characteristics of different channel length n-MOSFETs have been investigated. As the channel length of device decreases, the rate of transconductance degradation is fast, especially when its channel length is less than 1 um, the rate of transconductance degradation is faster. These results can be explained by interface state density increased after hot carrier injection.

Key words: hot-carrier-effect, MOSFET, transconductance, threshold voltage, reliability

Zhu Weiling Huang Meiqian Zhang Xiaowen. Influence of Hot-Carrier-Effect on Reliability of n-MOSFETs[J]. Journal of South China University of Technology(Natural Science Edition), 2003, 31(7): 33-36.

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Influence of Hot-Carrier-Effect on Reliability of n-MOSFETs

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