Journal of South China University of Technology (Natural Science Edition) ›› 2019, Vol. 47 ›› Issue (1): 1-6.doi: 10.12141/j.issn.1000-565x.180311

• Mechanical Engineering •     Next Articles

Resonant Soft Switching Plasma Power Supply Based on SiC MOSFET

WANG Zhenmin1 WU Jianwen1 FAN Wenyan1 YE Chunxian2    

  1.  1． School of Mechanical and Automotive Engineering，South China University of Technology，Guangzhou 510640， Guangdong，China; 2． Shenzhen Advantage Power Limited，Shenzhen 518000，Guangdong，China
  • Received:2018-06-20 Revised:2018-09-04 Online:2019-01-25 Published:2018-12-01
  • Contact: 王振民( 1974) ，男，教授，博士生导师，主要从事高端焊割装备及机器人等研究 E-mail:wangzhm@scut.edu.cn
  • About author:王振民( 1974) ，男，教授，博士生导师，主要从事高端焊割装备及机器人等研究
  • Supported by:
     Supported by the National Natural Science Foundation of China( 51875212) and the Science and Technology Planning Project of Guangdong Province( 2018A030313192，2017B090901023，2016B090927008) 

PDF

192

Abstract: SiC MOSFET can simplify circuit topology and improve power density and efficiency of power supply． A full bridge resonant converter using a new SiC power device was proposed to promote the upgrading of high-power plasma power supply． The main circuit of the resonant converter adopts LLC Zero Voltage Switching ( ZVS) topology，which can enlarge the frequency range of resonant commutation to 260 ～ 310 kHz． The rated output power of the designed full bridge LLC ZVS resonant converter prototype is 8kW and the output voltage is 270V． The driving performance，commutation process，temperature rise and efficiency of the 8kW SiC MOSFET full-bridge LLC ZVS resonant converter prototype were tested． The results show that the developed resonant soft-switching plasma power supply is of good performance and high reliability，and both its efficiency and power density are better than those of the traditional LLC resonant converter using Si MOSFET． 

Key words: plasma power supply, resonant converter, SiC MOSFET, power density, efficiency

CLC Number: