Abstract:

A new method was first proposed to realize the low-temperature sinterlng of Si//Mo structure.Then,according to the theories of thermoelasticity and interlaminar stress of composites,the interlaminar stresses of the Si/Mo structure at diferent sintering temperatures were analyzed.Moreover,the stress distribution in the Si wafer was measured by using a infrared photoelastic system.Experimental results indicate that the stress distribution
varies with the sintering temperature,and that the stress decreases with the sintering temperature.By the comparison between the experimental and theoretical results,good consistency is obtained,thus verifying the correctness of the theoretical analyses.

Key words: silicon, sintering stress, sintering temperature, infrared photoelasticity