Journal of South China University of Technology (Natural Science Edition) ›› 2015, Vol. 43 ›› Issue (3): 1-8.doi: 10.3969/j.issn.1000-565X.2015.03.001

• Mechanical Engineering •     Next Articles

Output Performance of Silicon Pressure Sensor Influenced by Deformation of Sensor Substrate

Hu Guo-qing1 Gong Xiao-shan1 Zhou Yong-hong2 Zou Chong2 Jahangir Alam1   

  1. 1． School of Mechanical and Automotive Engineering，South China University of Technology，Guangzhou 510640,Guangdong，China;2． Fujian Wide Plus Precision Instruments Co．，Ltd．，Fuzhou 350015，Fujian，China
  • Received:2014-09-28 Revised:2014-12-15 Online:2015-03-25 Published:2015-02-10
  • Contact: 胡国清(1964-)，男，教授，博士生导师，主要从事先进传感器技术、机器人智能技术研究． E-mail:gqhu@scut.edu.cn
  • About author:胡国清(1964-)，男，教授，博士生导师，主要从事先进传感器技术、机器人智能技术研究．
  • Supported by:
    Supported by the National High-tech R＆D Program (863 Program)(2014AA042000)

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Abstract: In order to analyze the performance of silicon pressure sensor influenced by the deformation of sensor substrate，firstly，the stress distribution of pressure sensor quadrate in the thin diaphragm was deduced on the basis of elastic mechanics theory and plate-shell theory，which provided a basis for the arrangement of resisters in strain membrane． Secondly，the effect of substrate deformation on the stress difference of strain membrane was analyzed via a simulation in ANSYS environment． Then，in order to diminish the influence of sensor substrate deformation，an appropriate optimization of substrate structure was conducted，and a comparison of simulation results was made．Finally，experiments were carried out to test the outputs of the sensor before and after optimization． It is indicated that，after the optimization，the largest deformation of sensor chip center reduces from 2． 172μm to 1． 819μm，and the output error decreases from 0． 95% to 0． 60%．

Key words: pressure sensors, silicon sensors, output performance, finite element analysis, structural optimization