Abstract: The traditional upper limit of magnetic induction density B parallel to target surface in rectangular planar magnetron sputtering target has been increased by analyzing‚designing and experimenting．The results show that shielding cover can be discarded‚naked target can be adopted and the B can exceed0．05T greatly and achieved0．09T ‚under the condition of the of magnetic induction density paral - lel to cathode bottom and sides under0．0005T by shielding‚and at the same time the cathode upper surface is covered with the same kind of target material．Further more‚the increase of B reduced greatly the touching off and keeping discharge voltages during magnetron sputtering coating‚which gives another approach to lower voltage magnetron sputtering．

Key words: magnetron sputtering, shielding cover, magnetic induction density, design