关键词: 焦耳热效应, 集成电路, 金属互连, 电迁移

Abstract: By using the fitting method and the DESTIN testing system‚the relationship between the temperature and the resistance of the metal interconnector in integrated circuit （IC） was studied‚and the Joule-heated effect of the metal in-terconnectors with various materials‚sizes and structures were then investigated．It is revealed that in the accelerating test conditions with high current density and high temperature‚the Joule-heated effect must be taken into consideration‚for the metal temperature auto-increases rather rapidly．By the proposed method‚the error caused by the replacement of real temperature in specimen surface by the circumstance temperature can be settled‚thus obtaining the reliability analysis re-sult with more accuracy．

Key words:  Joule-heated effect, integrated circuit, metal interconnector, electromigration