Aiming at the low mobilities of the thin film transistors respectively based on amorphous silicon and organic semiconductor,ZnO thin-film transistors ( ZnO-TFTs) were successfully prepared by means of the reactive magnetron sputtering from a high-purity Zn metal target,with the ZnO thin-films annealed at different temperatures as the active layer. The effects of the annealing temperature on the electrical properties of the ZnO-TFTs were investigated. The results show that the carrier mobility of the ZnO-TFTs obviously increases with the annealing temperature,which is up to 8. 00 cm² /( V·s) at 700℃,while the threshold voltage obviously decreases with the increase of the annealing temperature,and that ZnO-TFTs with the annealing treatment at a higher temperature is of lower OFF-state current. Moreover,according to the microstructure and compositions of the ZnO thin-films characterized by means of XRD,AFM and XPS,it is concluded that the performance improvement of the ZnO-TFTs with the increase of the annealing temperature is attributed to the facts that the increase of the temperature results in larger and more uniform grain size,lower surface roughness and lower oxygen content.