Journal of South China University of Technology(Natural Science) >

2019 , Vol. 47 >Issue 1: 1 - 6

DOI: https://doi.org/10.12141/j.issn.1000-565x.180311

Mechanical Engineering

Resonant Soft Switching Plasma Power Supply Based on SiC MOSFET

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  •  1． School of Mechanical and Automotive Engineering，South China University of Technology，Guangzhou 510640， Guangdong，China; 2． Shenzhen Advantage Power Limited，Shenzhen 518000，Guangdong，China
王振民( 1974) ，男，教授，博士生导师，主要从事高端焊割装备及机器人等研究

Received date: 2018-06-20

  Revised date: 2018-09-04

  Online published: 2018-12-01

Supported by

 Supported by the National Natural Science Foundation of China( 51875212) and the Science and Technology Planning Project of Guangdong Province( 2018A030313192，2017B090901023，2016B090927008) 

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Abstract

SiC MOSFET can simplify circuit topology and improve power density and efficiency of power supply． A full bridge resonant converter using a new SiC power device was proposed to promote the upgrading of high-power plasma power supply． The main circuit of the resonant converter adopts LLC Zero Voltage Switching ( ZVS) topology，which can enlarge the frequency range of resonant commutation to 260 ～ 310 kHz． The rated output power of the designed full bridge LLC ZVS resonant converter prototype is 8kW and the output voltage is 270V． The driving performance，commutation process，temperature rise and efficiency of the 8kW SiC MOSFET full-bridge LLC ZVS resonant converter prototype were tested． The results show that the developed resonant soft-switching plasma power supply is of good performance and high reliability，and both its efficiency and power density are better than those of the traditional LLC resonant converter using Si MOSFET． 

Key words： plasma power supply; resonant converter; SiC MOSFET; power density; efficiency

Cite this article

WANG Zhenmin WU Jianwen FAN Wenyan YE Chunxian .

Resonant Soft Switching Plasma Power Supply Based on SiC MOSFET
[J]. Journal of South China University of Technology(Natural Science), 2019 , 47(1) : 1 -6 . DOI: 10.12141/j.issn.1000-565x.180311

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