Materials Science & Technology

Research on Thermal Performance Of Bi-In-Sn-Sb Quaternary Alloy Interface Materials

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  • 1. School of Chemistry and Chemical Engineering,South China University of Technology,Guangzhou 510640,Guangdong,China;
    2. SCUT-Zhuhai Institute of Modern Industrial Innovation,Zhuhai 519175,Guangdong,China
李静( 1966) ,女,博士,教授,主要从事强化传热及新材料等的研究

Received date: 2018-03-07

  Revised date: 2018-07-24

  Online published: 2018-10-02

Supported by

The National Natural Science Foundation of China( 51476193,51176053) and the“13th Five-Year Plan”Civil Aerospace Technology Pre-Research Project of the State Administration of Science,Technology,and Industry for National Defense( 501-01-2018-0167,A2180150) 

Abstract

Alloy interface materials with excellent thermal contact resistance elimination rate are widely used in the electronics industry to improve the thermal conductivity between material contact surfaces. In this paper, a novel Bi-In-Sn-Sb quaternary alloy was fabricated by adding a small amount of expandable metal Sb to Bi-In-Sn ternary alloy and smelting it in a tube furnace at 700 ℃. This alloy has a low melting point (~ 61 ℃), high thermal conductivity (~ 23.8 W m-1 k-1) and extremely low thermal contact resistance (~ 12.3 mm2 K W-1). The eliminating efficiency of thermal resistance between ceramic substrates is up to 95.9%, which can greatly improve the heat transfer performance between the substrates. The results show that the volumetric expansion rate of Bi-In-Sn-Sb quaternary alloy is as high as 88.6% after phase change (at 80 ℃), which can effectively reduce the residue of air gap between interfaces and improve the quality of contact surfaces. Therefore, the expandable phase change Bi-In-Sn-Sb quaternary alloy most likely becomes a good candidate of high performance thermal interface materials.

Cite this article

LI Jing CHEN Xuyang LEI Rubai ZHANG Ding FAN Chunlei . Research on Thermal Performance Of Bi-In-Sn-Sb Quaternary Alloy Interface Materials[J]. Journal of South China University of Technology(Natural Science), 2018 , 46(11) : 39 -46 . DOI: 10.3969/j.issn.1000-565X.2018.11.006

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