Journal of South China University of Technology(Natural Science) >

2015 , Vol. 43 >Issue 3: 1 - 8

DOI: https://doi.org/10.3969/j.issn.1000-565X.2015.03.001

Mechanical Engineering

Output Performance of Silicon Pressure Sensor Influenced by Deformation of Sensor Substrate

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  • 1． School of Mechanical and Automotive Engineering，South China University of Technology，Guangzhou 510640,Guangdong，China;2． Fujian Wide Plus Precision Instruments Co．，Ltd．，Fuzhou 350015，Fujian，China
胡国清(1964-)，男，教授，博士生导师，主要从事先进传感器技术、机器人智能技术研究．

Received date: 2014-09-28

  Revised date: 2014-12-15

  Online published: 2015-02-10

Supported by

Supported by the National High-tech R＆D Program (863 Program)(2014AA042000)

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Abstract

In order to analyze the performance of silicon pressure sensor influenced by the deformation of sensor substrate，firstly，the stress distribution of pressure sensor quadrate in the thin diaphragm was deduced on the basis of elastic mechanics theory and plate-shell theory，which provided a basis for the arrangement of resisters in strain membrane． Secondly，the effect of substrate deformation on the stress difference of strain membrane was analyzed via a simulation in ANSYS environment． Then，in order to diminish the influence of sensor substrate deformation，an appropriate optimization of substrate structure was conducted，and a comparison of simulation results was made．Finally，experiments were carried out to test the outputs of the sensor before and after optimization． It is indicated that，after the optimization，the largest deformation of sensor chip center reduces from 2． 172μm to 1． 819μm，and the output error decreases from 0． 95% to 0． 60%．

Key words： pressure sensors; silicon sensors; output performance; finite element analysis; structural optimization

Cite this article

Hu Guo-qing Gong Xiao-shan Zhou Yong-hong Zou Chong Jahangir Alam . Output Performance of Silicon Pressure Sensor Influenced by Deformation of Sensor Substrate[J]. Journal of South China University of Technology(Natural Science), 2015 , 43(3) : 1 -8 . DOI: 10.3969/j.issn.1000-565X.2015.03.001

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