Journal of South China University of Technology (Natural Science Edition) ›› 2009, Vol. 37 ›› Issue (5): 23-26，42.

• Electronics, Communication & Automation Technology • Previous Articles     Next Articles

Evaluation of Hot Carrier Effect of SiGe HBT

Lin Xiao-ling1  Kong Xue-dong2  En Yun-fei2  Zhang Xiao-wen2  Yao Ruo-he1   

  1. 1,School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, Guangdong, 2. National Key Laboratory for Reliability Physics and Application Technology of Electronic Product, The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangzhou 510610, Guangdong, China ; China
  • Received:2008-05-06 Revised:2008-07-13 Online:2009-05-25 Published:2009-05-25
  • Contact: 姚若河（1961-），男，教授，博士生导师，主要从事集成电路设计、计算微电子学和新型光电器件等研究．E-mail：phrhyao@scut．edu.cn E-mail:lin_x_j@163．com
  • About author:林晓玲（1978-），女，在职博士生，工业和信息化部电子第五研究所工程师，主要从事微电子可靠性物理、SiGeHBT可靠性、Ic失效分析技术等研究．
  • Supported by:

    模拟集成电路国家重点实验室开放基金资助项目（51439030105DZ1504）

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Abstract:

The hot carrier effect （HCE） of SiGe heterojunction bipolar transistor （HBT） is generally rneasured using the voltage-accelerated degradation method at high reverse emitter-base （EB） voltages with open-circuit col- lector （OCSAM）. However, when OCSAM is employed, the failure mechanism of SiGe HBT at high voltages is dif- ferent from that at low voltages, and the time cost is high. In order to solve these problems, the HCE reliability evaluation of SiGe HBT is carried out using the current-accelerated stress method at low reverse EB voltages and high stress current achieved by forward-biasing the collector-base （CB） junction （FCSAM）. The variation of elec- trical characteristics before and after the application of stress is investigated and the degradation mechanism of elec- trical characteristics is analyzed. The results show that, with the increase of applying time of stress, the current gain gradually degrades. As compared with the conventional voltage-accelerated method OCSAM, FCSAM signifi- cantly saves the test time and can effectively predict the long-term reliability of SiGe HBT.

Key words: SiGe heterojunction bipolar transistor, current acceleration, reliability, hot carrier effect