Journal of South China University of Technology (Natural Science Edition) ›› 2017, Vol. 45 ›› Issue (1): 48-52.doi: 10.3969/j.issn.1000-565X.2017.01.007

• Electronics, Communication & Automation Technology • Previous Articles     Next Articles

Research on Thermal Hysteresis of Silicon-Based Semiconductor

SUN Zhi-gang HE Xiong XIE Qing-xing LI Yue-chou PANG Yu-yu   

  1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing,Wuhan University of Technology,Wuhan 430070,Hubei,China
  • Received:2015-11-20 Revised:2016-07-13 Online:2017-01-25 Published:2016-12-01
  • Contact: 孙志刚( 1969-) ，男，教授，主要从事非磁性半导体电输运性能研究． E-mail:sun_zg@whut.edu.cn
  • About author:孙志刚( 1969-) ，男，教授，主要从事非磁性半导体电输运性能研究．
  • Supported by:
    Supported by the National Natural Science Foundation of China( 11574243， 11174231)

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Abstract:

In this paper,the electrical transport properties ( V-I characteristics) of Ag /SiO2 /p-Si ∶ B /SiO2 /Ag device at different temperatures are investigated by means of four-wire method,finding that an obvious thermal hysteresis phenomenon occurs in V-I curves at low temperatures.In order to eliminate the experimental errors caused by the thermal hysteresis,two methods of prolonging the interval between two consecutive measurements and improving the heat conduction ability of system are proposed,and the first method is used to remove the effects of the thermal hysteresis on the electrical transport properties of the device.The results show that when the electrical properties and magnetoresistance effects of semiconductor-based materials are investigated,the thermal hysteresis phenomenon should be treated carefully,otherwise it may lead to erroneous results.

Key words: thermal hysteresis, electrical properties, silicon-based semiconductor

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