Journal of South China University of Technology(Natural Science Edition) ›› 2012, Vol. 40 ›› Issue (3): 69-73.

• Electronics, Communication & Automation Technology • Previous Articles     Next Articles

SET/CMOS Inverter Based on Negative Differential Resistance Characteristics

Wei Rong-shan  Chen Shou-chang  Chen Jin-feng  He Ming-hua   

  • Received:2011-10-20 Revised:2011-12-19 Online:2012-03-25 Published:2012-02-01
  • Contact: 魏榕山(1980-) ，男，博士，讲师，主要从事纳米电子器件与电路研究． E-mail:wrs08@fzu.edu.cn
  • About author:魏榕山(1980-) ，男，博士，讲师，主要从事纳米电子器件与电路研究．
  • Supported by:

    国家“973”计划项目( 2011CB808000) ; 福建省科技厅重大专项( 2009HZ0007-1)

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Abstract:

A novel hybrid SET /CMOS inverter is proposed in this paper based on the negative differential resistance ( NDR) characteristics that are realized by connecting one single electron transistor ( SET) and one PMOS transistor in series. In this inverter,two monostable points for realizing the inverting function are constructed by utilizing the NDR characteristics and NMOS transistor’s current-voltage characteristics. By using a compact subcircuit model of the SET and a 22 nm predictive technology model ( PTM) of the CMOS transistor,the operation of the hybrid SET /CMOS inverter is then simulated with an HSPICE simulator. The results show that the inverter works well,with its power consumption lower than that of the traditional CMOS inverter,and that the proposed inverter is superior to other SET inverters because it achieves a full-swing output voltage and a smaller transmission delay at room temperature.

Key words: single electron transistors, inverters, HSPICE simulation, negative differential resistance

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