Journal of South China University of Technology(Natural Science Edition) ›› 2011, Vol. 39 ›› Issue (11): 120-124.

• Materials Science & Technology • Previous Articles     Next Articles

Effect of Current Stress on Shear Strength and Fracture Mode of Al /SnAgCu /Cu Interconnecting Structure

Lu Yu-dong1  Wan Ming2  En Yun-fei1  Wang Xin2  Cheng Jun3  He Xiao-qi1   

  1. 1. The 5th Electronics Research Institute of the Ministry of Industry and Information Technology,Guangzhou 510610,Guangdong,China; 2. School of Materials Science and Engineering,South China University of Technology,Guangzhou 510640,Guangdong,China; 3. School of Electronic and Information Engineering,South China University of Technology,Guangzhou 510640,Guangdong，China
  • Received:2011-01-11 Revised:2011-07-25 Online:2011-11-25 Published:2011-10-03
  • Contact: 陆裕东(1979-) ，男，博士，副研究员，主要从事微电子封装与可靠性研究． E-mail:yudonglu@yahoo.com.cn
  • About author:陆裕东(1979-) ，男，博士，副研究员，主要从事微电子封装与可靠性研究．
  • Supported by:

    科技部国际科技合作与交流重大项目( 2010DFB10070) ; 国家预研基金资助项目( 51323060305) ; 中国博士后科学基金资助项目( 20080430825)

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Abstract:

The failure position and failure mode of SnAgCu flip-chip solder bumps enduring thermal stress and electrical/thermal complex stress before shear test were investigated,and the difference in microstructure of the interconnecting structure enduring different stresses were compared. Moreover,the effects of electromigration induced by high current density on the shear strength and the fracture mode of Al /SnAgCu /Cu interconnecting structure were analyzed. The results indicate that there are two shear fracture modes of the flip-chip solar bumps after the aging at a high temperature,namely the brittle fracture on the Al-solder interface and the ductile fracture in the solder bumps,that the failure position and the fracture surface morphology of the interconnecting structure change after the aging at a high temperature and high current stress,that the pancake-type voids and the abnormal growth of intermetallic compound induced by electromigration are the main cause of failure,and that the two fracture modes alternately distribute in the interconnecting structure due to the alternate change of current flow in flip-chip solder bumps.

Key words: SnAgCu, bump, interconnecting structure, mechanical strength, fracture mode, intermetallic compound, electromigration

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