Journal of South China University of Technology (Natural Science Edition) ›› 2006, Vol. 34 ›› Issue (10): 105-108,112.

• Physics • Previous Articles     Next Articles

Infuence of Thermal Treatments of Ta2O5Gate Insulator in H2 Atmosphere on Performance of Organic Thin-Film Transistors

Peng Jun-biao  Lan Lin-feng  Yang Kai-xia  Niu Qiao-li  Cao Yong   

  1. Institute of Polymer Optoelectronic Materials and Devices,South China Univ.of Tech.,Guangzhou 510640,Guangdong,China
  • Received:2005-09-02 Online:2006-10-25 Published:2006-10-25
  • Contact: 彭俊彪(1962-)，男，博士，教授，主要从事高分子光电器件物理研究． E-mail:psjbpeng@scut.edu.cn
  • About author:彭俊彪(1962-)，男，博士，教授，主要从事高分子光电器件物理研究．
  • Supported by:

    国家自然科学基金资助项目(90201023，50573024)；国家973计划项目(2002CB613405)

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Abstract:

A kind of organic thin．film transistor(OTFT)was fabricated withTa2O5as the gate insulator and poly(2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene-vinylene)(MEH-PPV)as the active material.The influence of therm al treatment of theTa2O5 gate insulator in H2,atmosphere on the perform ance of OTFT was then discussed,and the re.asons for the perform ance improvement of OTFT were analyzed．The results show that,after the therm al treat-ment of the Ta2O5gate insulator in H2 atmosphere,the field effect mobility of MEH-PPV can be greatly enhanced from 1.24×10-5 cm2 /(V·S)to 2.15×10-4cm 2/(V·S),while the threshold voltage decreases.

Key words: organic transistor, tantalum oxide, thermal treatment in H2 atmosphere