Journal of South China University of Technology (Natural Science Edition) ›› 2006, Vol. 34 ›› Issue (1): 48-51.

• Electronics, Communication & Automation Technology • Previous Articles     Next Articles

PTPD/AIq3 Heterostructure Electroluminescent Diode and Its Stability

Nie Hai  Zhang Bo  Tang Xian-zhong  Li Yuan-xun   

  1. School of Microelectronics and Solid-State Electronics,Univ.of Electronics Science and Tech.of China,Chengdu 610054,Sichuan,China
  • Received:2004-12-03 Online:2006-01-25 Published:2006-01-25
  • Contact: 聂海(1964-)，男，博士生，主要从事有机电致发光材料与器件方面的研究 E-mail:nearhigh@vip.sina.oom
  • About author:聂海(1964-)，男，博士生，主要从事有机电致发光材料与器件方面的研究
  • Supported by:

    四川省重点科技攻关资助项目(03GG009-002)

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Abstract:

ITO/PTPD/Alq3/Mg:Ag heterostructure electroluminescent diode was fabricated by using a novel poly-TPD as the hole transport material，and its electroluminescent properties was investigated.The results indicate that only the intrinsic emission of PD(poly-TPD)is obtained when Alq3 layer is very thin(not more than 10 nm),and that only the intrinsic emission of Alq3 is obtained when the thickness of Alq3 layer is up to 50 nm.Moreover,the fabricated diode is of an improved stability due to the excellent thermal stability and film quality of PTPD,as, compare with the typical ITO/TPD/Alq3/Mg:Ag device.

Key words: poly-TPD, diode, heterostructure, organic electroluminescence