Journal of South China University of Technology(Natural Science Edition) ›› 2005, Vol. 33 ›› Issue (7): 28-31.

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Quality Improvement of SSP as the Substrate of Polycrystalline Silicon Thin Film Via ZM R Technique

Hu Yun-fei1  Shen Hui2  Wang Lei3  Zou Xi-wu3  Ban Qun2  Liang Zong-tun3  Liu Zheng-yi1  Wen Li-shi1   

  1. 1.College of Mechanical Engineering,South China Univ.of Tech.,Guangzhou 510640,Guangdong,China;2.Institute of So lar Energy System,Sun Yat-Sen Univ.,Guan gzhou 510275,Guangdong,China;3.Guangzhou Institute of Energy Conversion,the Chinese Academy of Sciences,Guangzhou 51 0640.Guangdong.China
  • Received:2004-10-18 Online:2005-07-25 Published:2005-07-25
  • Contact: 胡芸菲(1978-)，女，博士生，主要从事功能材料研究． E-mail:huyf@ms.giec.ac.cn
  • About author:胡芸菲(1978-)，女，博士生，主要从事功能材料研究．
  • Supported by:

    国家自然科学基金资助项目(50376067)；国家“863”计划项目(2001AA513060)

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Abstract:

The polycrystalline silicon(Poly-Si)thin film,an active layer of the solar cell,was prepared by means of Chemical Vapor Deposition(CVD)with SSP(Silicon Sheet from Powder)as,the substrate.The ZMR(Zone Mehing Recrystallization)technique was next introduced to improve the smoothness and crystal quality of SSP and to further improve the quality of the thin film.The surface profiles,micro-morphologies and crystal quality of SSP ribbon and Poly-Si film were then investigated by the step profiler,XRD(X-ray Diffraction)and SEM (Scanning Electron Microscopy).It is shown that the surface smoothness of SSP is improved after the ZMR process,and SSP with[3 1 1]preferred orientation tends to grow in[1 1 1]prefered orientation.Moreover,the crystal size of the thin film on SSP ribbon via ZMR is more than 100μm,but there is not yet enough evidence to prove that ZMR greatly improves the crystal quality of Poly-Si thin film.

Key words: zone melting recrystallization, silicon sheet from powder, polycrystalline silicon thin film, smoothness, prefered orientation