Journal of South China University of Technology (Natural Science Edition) ›› 2005, Vol. 33 ›› Issue (3): 60-62.

Previous Articles     Next Articles

Investigation into I-v Characteristics of Single-Benzene Molecular Device by M eans of Tight-Binding M ethod

Li Na  Cai Min   

  1. College of Physical Science and Tech.,South China Univ.of Tech.,Guangzhou 510640,Guangdong,China
  • Received:2003-12-24 Online:2005-03-25 Published:2005-03-25
  • Contact: Li Na(born in 1975)，female，lecturer，mainly researches on semiconductor devices and integration technologY． E-mail:hblina@ china.com.cn
  • About author:Li Na(born in 1975)，female，lecturer，mainly researches on semiconductor devices and integration technologY．

PDF

514

Abstract:

The Tight-Binding Method is adopted to investigate the I-V characteristics of a three-terminal singlebenzene molecular device.with the results well reflecting the electrical characteristics of MOS(Metal-Oxide-Semiconductor)devices.The influence of temperature on the I-V characteristics of the device is also simulated and discussed.it is found that the current magnitude increases with the increase in the gate voltage,and that temperature greatly afects the current magnitude,which lays a theoretical basis for the development of molecular devices and nano-devices.

Key words: tight-binding, molecular device, I-V characteristic