Journal of South China University of Technology(Natural Science Edition) ›› 2004, Vol. 32 ›› Issue (1): 29-32.

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Turn-off Model of the New Type Power Device MCT

Cai L- i juan Zou Zu-bing   

  1. College of Electric Power ‚South China Univ.of Tech.‚Guangzhou510640‚Guangdong‚China
  • Received:2003-03-20 Online:2004-01-20 Published:2015-09-07
  • Contact: 蔡丽娟(1949-)‚女‚副教授‚主要从事电力电子系统的建模、仿真和控制的研究. E-mail:ljcai@scut.edu.cn
  • About author:蔡丽娟(1949-)‚女‚副教授‚主要从事电力电子系统的建模、仿真和控制的研究.

Abstract:  The fundamental structures and working principles of the new-type power device MCT (MOS-con-trolled Thyristor) were introduced‚and the physical state model in turn-off status modeled mathematically by the state-average method was discussed.The whole device was regarded as a system‚whose stability was analyzed by the state-space analytical method.Thereby the maximum controllable turn-off current of MCT‚and the relationship between the current and MCT’s structural parameters were deduced.The validity of conclusions drawn here was proved using MATLAB/Simulink.

Key words: field effect, thyristor, state-space analytical method, maximum controllable turn-off current, state model, structural parameter

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