Abstract: By the rapid thermal nitridation （RTN） of ultra-thin （10 nm） SiO2 films‚the ultra-thin SiOxNy dielectric films had been prepared with tungsten-halogen lamp as radiation source‚and the Al／nSi／SiOxNy／Al capacitors had been fabricated too．The characteristics and their variation with nitridation time of current transportation from n-Si to lamp heating rapid thermal nitridation ultra-thin SiO2films of the capacitor samples were investigated．The results show that in the lower field region the leakage current is little．When the field is in the tunneling region‚the current changes following the F-N rule． When the field is more stubborn‚two phenomena may occur： one is that the characteristics follow F-N rule until the breakdown‚and the other is that the characteristics move down and depart F-N rule until the breakdown．As the RTN time increases‚I-E curves move up all．All these experimental results have been discussed． 

Key words: rapid thermal nitridation, ultra-thin SiO2 film, current-transported characteristic