Journal of South China University of Technology (Natural Science Edition) ›› 2016, Vol. 44 ›› Issue (9): 67-72.doi: 10.3969/j.issn.1000-565X.2016.09.010

• Electronics, Communication & Automation Technology • Previous Articles     Next Articles

Active Bonding Mechanism Between Sn3.5Ag4Ti( Ce,Ga) and SiO2 Substrate at Low Temperature

CHENG Lan-xian LI Guo-yuan   

  1. School of Electronic and Information Engineering,South China University of Technology,Guangzhou 510640,Guangdong,China
  • Received:2015-11-20 Revised:2016-03-09 Online:2016-09-25 Published:2016-08-21
  • Contact: 成兰仙( 1981-) ，女，博士生，高级工程师，主要从事先进微电子封装材料研究． E-mail:cheng.lx@mail.scut.edu.cn
  • About author:成兰仙( 1981-) ，女，博士生，高级工程师，主要从事先进微电子封装材料研究．
  • Supported by:
    Supported by the Science and Technology Planning Project of Guangdong Province( 2013B010403003)

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Abstract: The interfacial microstructure and soldering mechanism of the low-temperature active bonding SiO2 substrate with Sn3.5Ag4Ti( Ce,Ga) alloy filler were investigated by means of SEM,EDX and TEM,and the mechanism and dynamic process of the active bonding between Sn3.5Ag4Ti( Ce,Ga) and SiO2 substrate were analyzed on the basis of the active adsorption and reaction thermodynamics theories.Experiment results show that TiSi and TiO2 phases form along the interface.Both theoretical results and experimental results indicate that the chemical adsorption of Ti on SiO2 substrate interface may be the main reason for wetting and plays an important role in the initial bonding stage,and that the main bonding mechanism of Sn3.5Ag4Ti( Ce,Ga) and SiO2 substrate can be described as the interfacial reaction between Ti and SiO2 and the forming of correspondent reactants.

Key words: low temperature, active bonding, interfacial product, active element

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