Modeling of Source/Drain Access Region Resistance in GaN HEMT Considering Self-Heating and Quasi-Saturation Effect

doi:10.12141/j.issn.1000-565X.230405

Abstract

Abstract:

The region between gate and source/drain is called source/drain access region resistances (R_D,S) in GaN HEMT equivalent circuit model. Accurately constructing the source/drain access region resistance (R_D,S) model is of great significance for analyzing the DC and RF characteristics and building a comprehensive large-signal model for GaN HEMTs. This paper presented an R_D,S model considering self-heating and quasi-saturation effects. Firstly, the nonlinear self-heating effect model was derived based on the relationship between the temperature of the source/drain access region (T_CH) and the dissipated power (P_diss). Furthermore, based on the quasi-saturation effect and Trofimenkoff model, a nonlinear R_D,S model was constructed. Under low bias conditions, the decrease of 2DEG and mobility with increasing T_CH results in the increase of R_D,S with T_CH at ambient temperatures (T_amb) ranging from 300 to 500 K. At constant T_amb, R_D,S presented a nonlinear increasing trend with the increase of bias. The results show that the average relative errors of the R_D models in this paper and in the literature are 0.32% and 1.78% respectively, and the root mean square errors (RMSE) are 0.039 and 0.20 Ω respectively. The mean relative errors of R_S model are 0.76% and 1.73% respectively, and RMSE are 0.023 and 0.047 Ω respectively. Compared with the experimental data reported in the literature, the results show that the average relative errors of the RD model in this paper and that in the literature are 0.91% and 1.59% respectively, and the RMSE are 0.012 and 0.015 Ω respectively. The mean relative errors of RS are 1.22% and 2.77% respectively, and RMSE were 0.001 5 and 0.003 4 Ω respectively. The proposed model with lower mean relative error and root mean square error, is able to more accurately characterize the variation of R_D,S with the drain-source current (I_DS) in the linear operating region of GaN HEMTs. This model can be used for the design optimization of the device or as a Spice model for circuit simulation.

Key words: source/drain access region resistance, GaN HEMTs, self-heating effect, quasi-saturation effect

CLC Number:

TN386

YAO Ruohe, YAO Yongkang, GENG Kuiwei. Modeling of Source/Drain Access Region Resistance in GaN HEMT Considering Self-Heating and Quasi-Saturation Effect[J]. Journal of South China University of Technology(Natural Science Edition), 2024, 52(7): 1-8.

Figures/Tables 11

Fig.1

Fig.2

Fig.3

Fig.4

Fig.5

Fig.6

Fig.7

Fig.8

Fig.9

Fig.10

Fig.11

References 27

1	WU Y F， KELLER S， KOZODOY P，et al ．Bias dependent microwave performance of AlGaN/GaN MODFET’s up to 100 V［J］．IEEE Electron Device Letters，1997，18（6）：290-292.
2	WU Y F， KELLER B P， FINI P，et al ．High Al-content AlGaN/GaN MODFETs for ultrahigh performance［J］．IEEE Electron Device Letters，1998，19（2）：50-53.
3	WU Y F， KELLER B P， FINI P，et al ．Short-channel Al0.5Ga0.5N/GaN MODFETs with power density >3 W/mm at 18 GHz［J］．Electronics Letters，1997，33（20）：1742-1743.
4	GHOSH S， AHSAN S A， CHAUHAN Y S，et al ．Modeling of source/drain access resistances and their temperature dependence in GaN HEMTs ［C］∥Proceedings of the 2016 IEEE International Conference on Electron Devices and Solid-State Circuits （EDSSC）．Hong Kong：IEEE，2016：247-250.
5	GREENBERG D R， ALAMO J A D ．Velocity saturation in the extrinsic device：a fundamental limit in HFET’s［J］．IEEE Transactions on Electron Devices，1994，41（8）：1334-1339.
6	ZHAO X， XU Y， JIA Y，et al ．Temperature-dependent access resistances in large-signal modeling of millimeter-wave AlGaN/GaN HEMTs［J］．IEEE Transactions on Microwave Theory Techniques，2017，65（7）：2271-2278.
7	YANG M， GAO Z， SU X，et al ．Study of drain access resistance in saturation region of AlGaN/GaN heterostructure field-effect transistors［J］．IEEE Transactions on Electron Devices，2022，69（5）：2293-2298.
8	THORSELL M， ANDERSSON K， FAGERLIND M，et al ．Thermal study of the high-frequency noise in GaN HEMTs［J］．IEEE Transactions on Microwave Theory，2009，57（1）：19-26.
9	GREENBERG D R， ALAMO J D ．Velocity saturation in the extrinsic device： a fundamental limit in HFET’s［J］．IEEE Transactions on Electron Devices，1994，41（8）：1334-1339.
10	TIRADO J M， MIEVILLE F， XU Z，et al ．Origin of the Increasing Access Resistance in AlGaN/GaN HEMTs ［C］∥Proceedings of the 2008 Device Research Conference．Santa Barbara：IEEE，2008：203-204.
11	FARAHMAND M， GARETTO C， BELLOTTI E，et al ．Monte Carlo simulation of electron transport in the Ⅲ-nitride wurtzite phase materials system： binaries and ternaries［J］．IEEE Transactions on Electron Devices，2001，48（3）：535-542.
12	TROFIMENKOFF F N ．Field-dependent mobility analysis of the field-effect transistor［J］．Proceedings of the IEEE，1965，53（11）：1765-1766.
13	CAUGHEY D M， THOMAS R E ．Carrier mobilities in silicon empirically related to doping and field［J］．Proceedings of the IEEE，1967，55（12）：2192-2193.
14	THORSELL M， ANDERSSON K， HJELMGREN H，et al ．Electrothermal access resistance model for GaN-based HEMTs［J］．IEEE Transactions on Electron Devices，2011，58（2）：466-472.
15	ISLAM S， ALIM M A， CHOWDHURY A Z，et al ． Modeling of access resistances and channel temperature estimation for GaN HEMT［J］．Journal of Thermal Analysis and Calorimetry，2022，147（20）：10991-10998.
16	YANG M， LÜ Y J， FENG Z H，et al ．Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistors［J］．Journal of Applied Physics，2016，119（22）：224501/1-5.
17	WANG C， XU Y， YU X，et al ．An Electrothermal model for empirical large-signal modeling of AlGaN/GaN HEMTs including self-heating and ambient temperature effects［J］．IEEE Transactions on Microwave Theory Techniques，2014，62（12）：2878-2887.
18	汪昌思，徐跃杭，闻彰，et al ．微波场板GaN HEMTs大信号特性及其模型研究［J］.电子科技大学学报，2017，46（3）：485-491.
	WANG Changsi， XU Yuehang， WEN Zhang，et al ． Large-signal characterization and modeling for microwave field-plate GaN HEMTs ［J］．Journal of University of Electronic Science and Technology of China，2017，46（3）：485-491.
19	DELAGEBEAUDEUF D， LINH N T ．Metal-（n） AlGaAs-GaAs two-dimensional electron gas FET［J］．IEEE Transactions on Electron Devices，1982，29（6）：955-960.
20	AMBACHER O， FOUTZ B ．Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures［J］．Journal of Applied Physics，1999，85（6）：3222-3233.
21	郝跃，张金风，张进成．氮化物宽禁带半导体材料与电子器件［M］．北京：科学出版社，2013： 77-86.
22	KHAN M N， AHMED U F， AHMED M M，et al ．An improved model to assess temperature-dependent DC characteristics of submicron GaN HEMTs［J］．Journal of Computational Electronics，2018，17（2）：653-662.
23	KHANDELWAL S， GOYAL N， FJELDLY T A. A physics-based analytical model for 2DEG charge density in AlGaN/GaN HEMT devices［J］．IEEE Transactions on Electron Devices，2011，58（10）：3622-3625.
24	CHOI S， HELLER E R， DORSEY D，et al ．The impact of bias conditions on self-Heating in AlGaN/GaN HEMTs［J］．IEEE Transactions on Electron Devices，2013，60（1）：159-162.
25	PU J， SUN J， ZHANG D ．An accurate polynomial-based analytical charge control model for AlGaN/GaN HEMT［J］．Semiconductors，2011，45（9）：1205-1210.
26	KRANTI A， HALDAR S， GUPTA R S ．An accurate charge control model for spontaneous and piezoelectric polarization dependent two-dimensional electron gas sheet charge density of lattice-mismatched AlGaN/GaN HEMTs［J］．Solid-State Electronics，2002，46（5）：621-630.
27	CUI P， LIU H， LIN W，et al ．Influence of different gate biases and gate lengths on parasitic source access resistance in AlGaN/GaN heterostructure FETs［J］．IEEE Transactions on Electron Devices，2017，64（3）：1038-1044.