Abstract: A triboelectric nanogenerator (TENG) based on MoS₂ /Graphene composite nanomaterial embedded in electron-receiving layer was prepared． The effects of different electron-receiving layers on the output voltage re-sponse，the frequency response and the load response of TENG were studied，and the related enhancement mecha-nism was also discussed． Under the working frequency of 5Hz，the output voltage of TENG embedded in the elec-tron-accepting layer is increased by 3 to 8 times，as compared with that of the TENG without the embedded elec-tron-accepting layer． At the optimum external load impedance，the maximum output power of the TENG (TENG-M/G) with the electron-receiving layer of MoS₂ /Graphene is 23 times that of the TENG (TENG-PI) with the elec-tron-receiving layer of polyimide film． By analyzing the total transfer quantity of electric charge，the causes of the difference in output among TENGs with different electron-accepting layers were discussed． In order to further prove the experimental results，metal-insulator-semiconductor (MIS) devices with different doped PI films as gate insula-ting layers were prepared． By analyzing its C-V characteristic curve at 1 kHz，the internal mechanism causing the difference of TENG output and the charge trapping effect of MoS₂ /Graphene composite in TENG were discussed．

Key words: triboelectric nanogenerator, molybdenum disulfide, graphene, composite materials, metal-insulator-semiconductor