关键词: 单电子晶体管, 反相器, HSPICE 仿真, 负微分电阻

Abstract:

A novel hybrid SET /CMOS inverter is proposed in this paper based on the negative differential resistance ( NDR) characteristics that are realized by connecting one single electron transistor ( SET) and one PMOS transistor in series. In this inverter,two monostable points for realizing the inverting function are constructed by utilizing the NDR characteristics and NMOS transistor’s current-voltage characteristics. By using a compact subcircuit model of the SET and a 22 nm predictive technology model ( PTM) of the CMOS transistor,the operation of the hybrid SET /CMOS inverter is then simulated with an HSPICE simulator. The results show that the inverter works well,with its power consumption lower than that of the traditional CMOS inverter,and that the proposed inverter is superior to other SET inverters because it achieves a full-swing output voltage and a smaller transmission delay at room temperature.

Key words: single electron transistors, inverters, HSPICE simulation, negative differential resistance