In this paper,the electrical transport properties ( V-I characteristics) of Ag /SiO2 /p-Si ∶ B /SiO2 /Ag device at different temperatures are investigated by means of four-wire method,finding that an obvious thermal hysteresis phenomenon occurs in V-I curves at low temperatures.In order to eliminate the experimental errors caused by the thermal hysteresis,two methods of prolonging the interval between two consecutive measurements and improving the heat conduction ability of system are proposed,and the first method is used to remove the effects of the thermal hysteresis on the electrical transport properties of the device.The results show that when the electrical properties and magnetoresistance effects of semiconductor-based materials are investigated,the thermal hysteresis phenomenon should be treated carefully,otherwise it may lead to erroneous results.