In order to meet the requirements of novel display technologies such as flexible active-matrix organic light-emitting diodes (AMOLED)，thin film transistors (TFTs) are fabricated，with low-temperature solution-pro-cessed ZnO as the semiconductor layer and with electrochemical oxidized alumina neodymium as the gate dielectric layer． In the preparation of ZnO semiconductor layer，carbon-free aqueous Zn(OH)_x-(NH₃)_y^(2-x)+ solution with low cost and fabrication simplicity is employed，and，more importantly，the energy for metal-ammine dissociation and ZnO formation is rather low thanks to the highly activated hydroxyl radicals． As a result，ZnO polycrystalline films can be realized at a relatively low temperature，namely 180℃． The proposed low-temperature solution-pro-cessed ZnO fabrication method combining with room-temperature electrochemically-oxidized gate dielectric layer helps achieve high mobility up to 0． 9 cm² /(V·s)，and is completely compatible with flexible substrates，so that it meets the demand of flexible electronic devices well．