Journal of South China University of Technology(Natural Science) >
GaN-Based Light-Emitting Diode Chip with Patterned Al Backside Reflector
Received date: 2014-02-27
Revised date: 2014-05-09
Online published: 2014-07-01
Supported by
国家“863”计划项目( 2014AA032609) ; 广东省战略性新兴产业发展专项资金资助项目( 2010A081002009,2011A081301004, 2012A080302003) ; 华南理工大学中央高校基本科研业务费专项资金资助项目( 2013ZM093, 2013ZP0017)
Patterned reflectors can improve the light-extraction efficiency of light-emitting diode ( LED) chips.Inthe investigation,a triangular lattice of the micro-scale SiO2-cone array was placed on the backside of a sapphiresubstrate,and then the metal Al was deposited on the lattice,so that a patterned reflector was built.Three-dimensionalsimulation results obtained through the Monte Carlo ray tracing method show that,as compared with the planemirror,the SiO2-cone patterned Al backside reflector can improve the light-extraction efficiency of LED chips by7.5%.Experimental results indicate that,when the injection current is 20mA,the LED samples with the patternedreflector achieve a light-output power increase by 8.4% without the degradation of the electrical performance,incomparison with those with plane mirrors.It is found from the two-dimensional finite-element thermodynamic simulationsthat the pattern reflector helps to achieve lower chip temperature and smaller chip thermal-stress in comparisonwith the plane mirror.In addition,the thermal stress concentration in the vicinity of micro-structures has littleeffect on the performance of LED chips.
Huang Hua-mao Hu Jin-yong Wang Hong . GaN-Based Light-Emitting Diode Chip with Patterned Al Backside Reflector[J]. Journal of South China University of Technology(Natural Science), 2014 , 42(8) : 14 -20 . DOI: 10.3969/j.issn.1000-565X.2014.08.003
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