Abstract: The direct photo-CVD SiO2 thin films were deposited successfully on silicon substrate at low temperature by using the SiH4 and O2 as the reaction gas and the low pressure Xe excited vacuum ultra-violet (VUV) as the photon source. The infrared absorption peaks related to the Si-H and Si-OH bonding do not appear in the FTIR spectrum of films, the absorption peaks related to the Si-O stretching vibration are in the range of 1 055 -1 069 cm-1. The fixed oxide charge density is in the range of 2×1010 ~3×1011 cm -2 by capacitance-voltage ( C-V) characteristics measurements. XPS analysis results show Si(2p) binding energy of the SiO2 film is 103.6 eV, the total amount of Silico-suboxide is 3. 72×1015 cm-2 at the SiO2/Si interface.

Key words: photo-CVD, SiO2 thin-film, FTIR, XPS, C-V characteristics