Journal of South China University of Technology (Natural Science Edition) ›› 2005, Vol. 33 ›› Issue (12): 92-95,104.

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Reliability Evaluation of Dielectric Si3 N4 Based on GaAs M M IC

Li Bin1  Lin Li1  Huang Yun2  Niu Li-rong3   

  1. 1.College of Physical Science and Technology,South China Univ.of Tech.,Guangzhou 5 10640,Guangdong,China;2.National Key Laboratory of Reliability Physics of Electronic Product,Guangzhou 510610,Guangdong,China;3.Nanjing Electronics Devices Institute,Nanjing 210016,Jiangsu,China
  • Received:2004-11-05 Online:2005-12-25 Published:2005-12-25
  • Contact: 李斌(1967-)，女，博士，副教授，主要从事半导体集成传感器，半导体器件与物理、半导体器件建模和可靠性研究 E-mail:llguisu@tom.com
  • About author:李斌(1967-)，女，博士，副教授，主要从事半导体集成传感器，半导体器件与物理、半导体器件建模和可靠性研究

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Abstract:

The breakdown characteristics of dielectric Si3 N4 based on GaAs MMIC(Microwave Monolithic Integrat-ed Circuit)were studied by using the ramped voltage-accelerated testing.The effects of the area and perimeter of capacitor,as well as the ramped rate on TDDB(Time Dependent Dielectric Breakdown)characteristics were also investigated.The results indicate that a greater area or a longer perimeter will result in more defects in the dielec-tric,thus causing much lower breakdown voltage and poorer reliability.According to the results of the ramped volt-age-accelerated testing with different ramped rates,the lifetime of silicon nitride capacitor at a normal working volt-age was finally predicted based on the TDDB linear field model.It is concluded that,compared with the tempera-ture-accelerated testing,the proposed method is of much faster speed and lower cost.

Key words: GaAs MMIC, breakdown, lifetime predication, TDDB, silicon nitride