从 n 型硅到 RTN 超薄 SiO2 膜的电流传输特性

华南理工大学学报(自然科学版) ›› 2003, Vol. 31 ›› Issue (10): 51-54.

从 n 型硅到 RTN 超薄 SiO2 膜的电流传输特性

冯文修张恒陈蒲生田浦延

华南理工大学应用物理系广东广州510640

出版日期:2003-10-20 发布日期:2022-06-02
作者简介:冯文修（1945－）男副教授主要从事薄膜物理及半导体物理研究．

Characteristics of Current Transportation from n-Si into Lamp Heating Rapid Thermal Nitridation Ultra-thin SiO2Films

Feng Wen-xiu Zhang Heng Chen Pu-sheng Tian Pu-yan

Dept．of Applied PhysicsSouth China Univ．of Tech．Guangzhou510640China

Online:2003-10-20 Published:2022-06-02

摘要/Abstract

摘要： 用卤素钨灯作辐射热源对超薄（10nm）SiO2 膜进行快速热氮化（RTN）制备了 SiOxNy 超薄栅介质膜并制作了 Al／n-Si／SiOxNy／Al 结构电容样品．研究了不同样品中 n 型 Si 到快速热氮化超薄 SiO2 膜的电流传输特性及其随氮化时间的变化．结果表明：低场时的漏电流很小；进入隧穿电场时I-E 曲线遵循 Fowler-Nordheim（F-N）规律；在更高的电场时主要出现两种情形其一是 I-E 曲线一直遵循 F-N 规律直至介质膜发生击穿其二是 I-E 曲线下移偏离 F-N 关系直至介质膜发生击穿．研究表明I-E 曲线随氮化时间增加而上移．文中对这些实验结果进行了解释．

关键词: 快速热氮化, 超薄 SiO2 膜, 电流传输特性

Abstract: By the rapid thermal nitridation （RTN） of ultra-thin （10 nm） SiO2 filmsthe ultra-thin SiOxNy dielectric films had been prepared with tungsten-halogen lamp as radiation sourceand the Al／nSi／SiOxNy／Al capacitors had been fabricated too．The characteristics and their variation with nitridation time of current transportation from n-Si to lamp heating rapid thermal nitridation ultra-thin SiO2films of the capacitor samples were investigated．The results show that in the lower field region the leakage current is little．When the field is in the tunneling regionthe current changes following the F-N rule． When the field is more stubborntwo phenomena may occur： one is that the characteristics follow F-N rule until the breakdownand the other is that the characteristics move down and depart F-N rule until the breakdown．As the RTN time increasesI-E curves move up all．All these experimental results have been discussed．

Key words: rapid thermal nitridation, ultra-thin SiO2 film, current-transported characteristic

中图分类号:

O483．3

冯文修张恒陈蒲生田浦延. 从 n 型硅到 RTN 超薄 SiO2 膜的电流传输特性[J]. 华南理工大学学报(自然科学版), 2003, 31(10): 51-54.

Feng Wen-xiu Zhang Heng Chen Pu-sheng Tian Pu-yan. Characteristics of Current Transportation from n-Si into Lamp Heating Rapid Thermal Nitridation Ultra-thin SiO2Films[J]. Journal of South China University of Technology(Natural Science Edition), 2003, 31(10): 51-54.