华南理工大学学报(自然科学版) ›› 2003, Vol. 31 ›› Issue (1): 65-69.

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利用背面 Ar +轰击改善 n 沟 MOSFET 线性区的特性

黄美浅 陈 平 李 旭 李观启    

  • 出版日期:2003-01-20 发布日期:2022-04-07
  • 通信作者: 黄美浅 (1946-)‚男‚副教授‚主要从事微电子学与半导体传感器等方面的研究.
  • 作者简介:黄美浅 (1946-)‚男‚副教授‚主要从事微电子学与半导体传感器等方面的研究.

Improvement of Characteristics in Linear Region of n-MOSFET Using Backsurface Ar + Bombardment

Huang Mei-qian Chen Ping Li Xu Li Guan-qi   

  1. Dept.of Applied Physics‚South China Univ.of Tech.‚Guangzhou510640‚China
  • Online:2003-01-20 Published:2022-04-07
  • Contact: 黄美浅 (1946-)‚男‚副教授‚主要从事微电子学与半导体传感器等方面的研究.
  • About author:黄美浅 (1946-)‚男‚副教授‚主要从事微电子学与半导体传感器等方面的研究.

摘要: 研究了利用背面 Ar +轰击改善 n 沟金属-氧化物-半导体场效应晶体管( nMOSFET)线性区的特性.用低能量(550eV)的 Ar +轰击 n-MOSFET 芯片的背面‚能有 效地改善其线性区的直流特性‚如跨导、沟道电导、阈值电压、表面有效迁移率以及低频噪 声等.实验结果表明‚随着轰击时间的增加‚跨导、沟道电导和表面有效迁移率先增大‚然 后减小;阈值电压先减小‚随后变大;而低频噪声在轰击后明显减小.实验证明‚上述参数 的变化是硅-二氧化硅界面态密度和二氧化硅中固定电荷密度在轰击后变化的结果.

关键词: 背面 Ar +轰击, MOS 场效应晶体管, 跨导, 迁移率, 噪声 

Abstract: Improvement of the characteristics in the linear region of n-MOSFET using the backsurface Ar + bombardment has been investigated.A low energy (550eV) argon-ion-beam is applied to bombard the backside of n-MOSFET chip‚thus the electrical characteristics of the transconductance‚channel conductance‚threshold voltage‚effective inversion layer carrier mobility and low-frequency noise of the devices in the linear region can be improved.The experiment results indicate that‚as the bombardment time increases‚the transconductance‚channel conductance and effective inversion layer carrier mobility increase at first‚and then decrease;the change tend of the threshold voltage is on the contrary;but the low-frequency noise decreases evidently after bombardment.It is proved that the improvement of these parameters is due to the decrease of interface state density and fixed charge density. 

Key words: backsurface Ar + bombardment;MOSFET, transconductance, mobility, noise

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