GaN HEMT源漏通道区电阻的自热和准饱和效应模型

姚若河, 姚永康, 耿魁伟

Modeling of Source/Drain Access Region Resistance in GaN HEMT Considering Self-Heating and Quasi-Saturation Effect

YAO Ruohe, YAO Yongkang, GENG Kuiwei

华南理工大学学报(自然科学版) . 2024, (7): 1 -8 . DOI: 10.12141/j.issn.1000-565X.230405