双栅非晶InGaZnO薄膜晶体管有源层厚度对电学性能的影响

蔡旻熹姚若河

Effects of Active Layer Thickness of Dual-Gate Amorphous InGaZnO Thin Film Transistors on Their Electrical Characteristics

CAI Min-xi YAO Ruo-he

华南理工大学学报（自然科学版） . 2016, (9): 61 -66,72 . DOI: 10.3969/j.issn.1000-565X.2016.09.009