利用背面Ar<sup>+</sup>轰击改善n

陈平黄美浅李旭李观启

Improvement of Characteristics in the Saturation Region of n-MOSFET Using Backsurface Ar Bombardment

Chen Ping Huang Mei-qian Li Xu Li Guan-qi

华南理工大学学报（自然科学版） . 2005, (2): 70 -74 .