针对非晶硅和有机薄膜晶体管的低迁移率问题，以高纯Zn 为靶材，反应磁控溅射沉积、且在不同温度下退火的ZnO 薄膜作为半导体活性层，成功地制备出基于ZnO 材料的薄膜晶体管( ZnO-TFT) ，研究了退火温度对ZnO-TFT 电特性的影响．结果表明: ZnOTFT的载流子迁移率随退火温度的升高而明显增大，700℃ 退火的样品迁移率为8. 00cm² /( V·s) ，阈值电压随退火温度的升高而明显减小，在较高温度下退火处理制备的ZnO-TFT 呈现出较低的关态电流． 结合X 射线衍射谱、原子力显微镜和X 射线光电子能谱对ZnO 薄膜的微结构及组分的分析，发现ZnO-TFT 性能随退火温度升高的改善来源于退火温度的升高使ZnO 薄膜的晶粒尺寸增大且更均匀、外形更规整、表面更光滑，氧含量更少．

Aiming at the low mobilities of the thin film transistors respectively based on amorphous silicon and organic semiconductor,ZnO thin-film transistors ( ZnO-TFTs) were successfully prepared by means of the reactive magnetron sputtering from a high-purity Zn metal target,with the ZnO thin-films annealed at different temperatures as the active layer. The effects of the annealing temperature on the electrical properties of the ZnO-TFTs were investigated. The results show that the carrier mobility of the ZnO-TFTs obviously increases with the annealing temperature,which is up to 8. 00 cm² /( V·s) at 700℃,while the threshold voltage obviously decreases with the increase of the annealing temperature,and that ZnO-TFTs with the annealing treatment at a higher temperature is of lower OFF-state current. Moreover,according to the microstructure and compositions of the ZnO thin-films characterized by means of XRD,AFM and XPS,it is concluded that the performance improvement of the ZnO-TFTs with the increase of the annealing temperature is attributed to the facts that the increase of the temperature results in larger and more uniform grain size,lower surface roughness and lower oxygen content.