利用中频反应磁控溅射技术,以Zn/Al（质量比98∶2）合金靶为靶材,制备了综合性能优良的铝掺杂氧化锌（ZnO：Al,AZO）透明导电薄膜.探讨了沉积工艺对薄膜结构、电学及光学性能的影响,分析了AZO薄膜的刻蚀性能以及所制备的绒面结构特性.结果表明：基体温度对薄膜生长有较大的影响;采用适当的沉积温度,薄膜具有较好的晶化率,晶粒呈明显的柱状生长,晶界间结合紧密,薄膜的电阻率为4.600×10^-4 Ω.cm;镀膜时基体的移动速度影响薄膜的晶体生长方式,但对其沉积效率影响不大;具有择优生长特性、形成柱状晶组织的薄膜经稀盐酸腐蚀后,其表面呈规则的粗糙形貌,此结构有利于充分捕集太阳光,从而提高薄膜太阳电池的效率.

Transparent aluminum-doped zinc oxide（ZnO：Al or AZO） thin films with high performance were fabricated by reactive mid-frequency（MF） magnetron sputtering from Zn/Al metallic targets（Zn-to-Al mass ratio of 98∶2） with a dual magnetron configuration.Then,the influence of deposition parameters on the structure as well as the electrical and optical properties of AZO films were investigated.Moreover,the etching behavior of the deposited films and the structural characteristics of the texture surfaces were analyzed.It is found that（1） the substrate temperature plays a significant role in the growth of the films;（2） films with good crystallinity and tightly-packed columnar structure can be obtained at a proper deposition temperature,the minimum resistivity of which being 4.600×10^-4 Ω·cm;（3） the moving speed of the substrate obviously affects the film growth,but no significant change in the deposition efficiency is observed;and（4） the film with obvious crystalline texture and columnar structure exhibits a regular rough morphology after being etched in diluted HCl,which favors an effective light trapping to meet the demand of thin-film solar cells.