为了建立适用于电路仿真器的泄漏区模型,通过泄漏电流、激活能和低频噪声等研究了多晶硅薄膜晶体管的泄漏产生机制.在不同的电场条件下,基于不同的泄漏产生机制,提出了产生-复合率的分区近似计算模型,并统一成适用于1×106~5×108V/m电场范围的泄漏电流模型.同时,建立了中低电场区的激活能模型和泄漏区低频噪声紧凑模型.将模型仿真结果与实验数据进行了比较,证明了所建立模型的有效性,且模型适用于电路仿真器.

In order to establish a suitable model to describe the leakage region of circuit simulators,the leakage generation mechanism of polysilicon thin-film transistors is investigated in terms of current,activation energy and low-frequency noise,etc.Then,based on different leakage mechanisms,some approximations of the generation-recombination model are proposed,and a unified leakage current model suitable for the electric field of 1×106~5×108 V/m is deduced.Moreover,the activation energy models for low and moderate electric fields are derived,and a compact model for low-frequency leakage current noise is put forward.Comparisons between the simulated and the experimental results show that the proposed models are all effective and suitable for circuit simulators.