为提高聚合物薄膜晶体管的稳定性,以单晶硅为衬底,二氧化硅为栅介质层,聚3-己基噻吩（P3HT）薄膜为半导体活性层,金属Au为源、漏电极,制备出聚合物薄膜晶体管（PTFT）,对该器件的电特性进行了表征,研究了该器件在空气环境下的稳定性,并对该器件在空气中的不稳定性机理进行了讨论.结果表明：当器件暴露在空气中时,随着暴露时间的增加,器件的饱和漏电流明显增大,阈值电压逐渐增加;空气中的水是影响器件特性的主要因素;通过采用光刻胶钝化处理可以有效地改善P3HT-PTFT器件在空气中的稳定性,并使器件的载流子迁移率提高3倍.

In order to improve the stability of polymer thin-film transistors（PTFTs）,PTFTs based on poly（3-hexyl-thiophene）（P3HT） thin films were fabricated on silicon substrate,with SiO2 as the gate insulator and with gold as the source and drain electrodes.Then,the electrical characteristics and air-stability of the devices were investigated,and the mechanism of the instability in air was discussed.The results indicate that,with the increase of exposure time,both the saturation current and the threshold voltage of the devices exposed to ambient air increase ob-viously,that the moisture of ambient air is the key to the device characteristics,and that the passivation treatment with a photoresist layer can effectively improve the stability of the devices exposed to ambient air and increase the carrier mobility by about 3 times.