制备了一种基于 MoS₂ /Graphene 复合纳米材料嵌入式电子接收层的摩擦纳米发电机 (TENG)，研究了不同电子接收层对 TENG 输出电压响应、频率响应及负载响应等参数的影响，并探讨了相关增强机制。在 5 Hz 的工作频率下，相比没有电子接收层的 TENG，嵌入电子接收层的 TENG 的输出电压提升了3 ～8 倍。在最佳外部负载阻抗的情况下，电子接收层为 MoS₂ /Graphene 的 TENG (TENG-M/G) 的最大输出功率是电子接收层为聚酰亚胺膜的 TENG (TENG-PI) 的23 倍。通过分析转移电荷量的差异，探讨了不同电子接收层的 TENG 输出差异性的原因。为了进一步验证实验结果，制作了掺杂不同 PI 膜作栅绝缘层的金属－绝缘体－半导体 (MIS) 器件，通过分析其在 1kHz 下的C-V 特性曲线，探讨了造成 TENG 输出差异性的内部机制及 MoS₂ /Graphene 复合材料在TENG 中的电荷捕获作用。

A triboelectric nanogenerator (TENG) based on MoS₂ /Graphene composite nanomaterial embedded in electron-receiving layer was prepared． The effects of different electron-receiving layers on the output voltage re-sponse，the frequency response and the load response of TENG were studied，and the related enhancement mecha-nism was also discussed． Under the working frequency of 5Hz，the output voltage of TENG embedded in the elec-tron-accepting layer is increased by 3 to 8 times，as compared with that of the TENG without the embedded elec-tron-accepting layer． At the optimum external load impedance，the maximum output power of the TENG (TENG-M/G) with the electron-receiving layer of MoS₂ /Graphene is 23 times that of the TENG (TENG-PI) with the elec-tron-receiving layer of polyimide film． By analyzing the total transfer quantity of electric charge，the causes of the difference in output among TENGs with different electron-accepting layers were discussed． In order to further prove the experimental results，metal-insulator-semiconductor (MIS) devices with different doped PI films as gate insula-ting layers were prepared． By analyzing its C-V characteristic curve at 1 kHz，the internal mechanism causing the difference of TENG output and the charge trapping effect of MoS₂ /Graphene composite in TENG were discussed．