利用 SiC MOSFET 能简化电路拓扑、提高电源的功率密度和效率． 为推动大功率 等离子体电源的升级换代，提出了一种采用新型 SiC 功率器件的全桥谐振变换器． 该谐振 变换器的主电路采用 LLC Zero Voltage Switching( ZVS) 拓扑结构，可将谐振换流频率范围 增大至260 ～310kHz． 设计的高频高压全桥 LLC ZVS 谐振变换器样机的额定输出功率为 8kW，输出电压为270V． 对所研制的8kW 级 SiC MOSFET 全桥 LLC ZVS 谐振变换器样机 的驱动性能、换流过程、温升以及效率进行了测试，结果表明，研制的谐振软开关等离子体 电源性能优良，工作稳定可靠，效率和功率密度均优于使用传统 Si MOSFET 的 LLC 谐振 变换器． 

SiC MOSFET can simplify circuit topology and improve power density and efficiency of power supply． A full bridge resonant converter using a new SiC power device was proposed to promote the upgrading of high-power plasma power supply． The main circuit of the resonant converter adopts LLC Zero Voltage Switching ( ZVS) topology，which can enlarge the frequency range of resonant commutation to 260 ～ 310 kHz． The rated output power of the designed full bridge LLC ZVS resonant converter prototype is 8kW and the output voltage is 270V． The driving performance，commutation process，temperature rise and efficiency of the 8kW SiC MOSFET full-bridge LLC ZVS resonant converter prototype were tested． The results show that the developed resonant soft-switching plasma power supply is of good performance and high reliability，and both its efficiency and power density are better than those of the traditional LLC resonant converter using Si MOSFET．