为了改善现有宽带低噪声放大器( LNA) 拓扑结构电路的性能，文中提出了一个 交叉耦合和负反馈技术相结合的宽带低噪声放大器架构． 该 LNA 基于复合 NMOS/PMOS 交叉耦合的无电感宽带差分并联反馈共源低噪声放大器( SFCS-LNA) ，进一步在输出端和 输入端增加交叉连接的 PMOS 管，引入新的负反馈结构，通过对所引入 PMOS 管的跨导进 行调节，增加了 LNA 输入匹配的自由度，以解决原复合 NMOS/PMOS 交叉耦合 SFCS-LNA 的反馈电阻受限于输入匹配的问题，从而在保证输入匹配的同时提高反馈电阻的阻值，改 善 LNA 中的噪声、输入匹配和增益之间相互制约的矛盾． 结果表明，该 LNA 架构能有效 降低 LNA 的噪声系数和提高 LNA 的电压增益． 

In order to improve the performance of existing broadband LNA topology cirtuits，a broadband low noise amplifier architecture combining cross-coupling and negative feedback technology is proposed，which further introduces a new negative feedback structure by adding PMOS transistors that are cross-connected from the output to the input based on a composite NMOS/PMOS cross-coupled inductorless broadband differential shunt feedback commonsource low-noise amplifier ( SFCS-LNA) ． By adjusting the transconductance of the adding PMOS transistors to composite NMOS/PMOS cross-coupled SFCS-LNA， the degree of freedom of the LNA was increased，and the problem that the feedback resistance of the original composite NMOS/PMOS cross-coupled SFCS-LNA is limited by the input matching was solved，which could independently increase the resistance of the feedback resistor while the input matching is maintained，minimizing the contradictions of mutual restraints between noise， input matching and gain of the LNA． The results show that the LNA architecture can effectively reduce the noise figure and improve the voltage gain of the LNA．