随着5G时代的来临，功率密度的增加对高集成度封装的功率放大芯片带来了严峻挑战。为此，本文提出一种基于功率放大芯片可靠性优化的多热源电热联合仿真方法。该方法从功率放大芯片的电路设计出发，利用电路和版图参数建立热建模的边界条件，采用仿真获得的功率放大芯片热分布优化电路设计和版图布局，从而实现电气指标和芯片可靠性的双向优化。该方法克服了传统热分析脱离芯片设计过程的缺点，实现了芯片级电热参数联合仿真的可靠性优化方法。为验证该方法的可行性，以当前主流4G LTE产品指标进行实验，通过分析多热源温度对电路的影响和对比版图的优化效果，说明该方法的优化性能。

The coming 5G communication system is giving great challenge to power amplifier (PA) since the increasing power density and highly integrated package demand. Based on this situation, this paper proposes a novel optimized design method, which combines the electric and thermal analysis result, to improve the reliability of power amplifier. The first step of this method is to design the circuit and layout of power amplifier. The subsequent step is to build an accurate model for thermal analysis based on the calculated parameters from circuit and layout. At last, utilizing the thermal distribution result of multi-heat sources inside chip optimizes the circuit and layout to reduce the working temperature and parameter error. By associating the electric design together with thermal result, the proposed method successfully overcomes the disadvantage of traditional temperature simulation methods which separate thermal analysis procedure from circuit design. In this paper, both circuit design and chip modeling are based on 4G LTE product parameters to verify the feasibility of proposed method. By analyses the temperature distribution of multiple on-chipheat sources and its influence on PA circuit performance, the experimental results confirm that through several circuit design and thermal simulation iterations of this method, the reliability of power amplifier chip can be optimized on the premise of minimizing area cost.